AOT10N60/aob10n60/aotf10n60 600v,10a n-channel mosfet v ds i d (at v gs =10v) 10a r ds(on) (at v gs =10v) < 0.75 w symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. 2 0.4 5 a w w/ o c c mj v/ns c maximum case-to-sink a maximum junction-to-case mj c/w c/w derate above 25 o c parameter AOT10N60/aob10n60 aotf10n60 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds the AOT10N60 & aob10n60 & aotf10n60 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts ca n be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drain-source voltage 600 AOT10N60/aob10n60 v 30 gate-source voltage t c =100c a 36 pulsed drain current c continuous drain current t c =25c i d avalanche current c 290 single plused avalanche energy g 580 4.4 repetitive avalanche energy c junction and storage temperature range maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 250 50 0.5 -- units c/w 65 0.5 65 2.5 aotf10n60 10 10* 7.2 7.2* g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units 600 700 bv dss / ? tj 0.65 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 0.6 0.75 w g fs 15 s v sd 0.73 1 v i s maximum body-diode continuous current 10 a i sm 36 a c iss 1100 1320 1600 pf c oss 105 130 160 pf c rss 7.5 9.3 11 pf r g 3 3.8 6 w q g 31 40 nc q gs 6 10 nc q gd 14.4 20 nc t d(on) 28 35 ns t r 66 80 ns t d(off) 76 95 ns t f 64 80 ns t rr 290 350 ns q rr 3.9 4.7 m c body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =5a reverse transfer capacitance i f =10a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =5a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 m a v ds =480v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =600v, v gs =0v id=250 a, vgs=0v diode forward voltage turn-off delaytime v gs =10v, v ds =300v, i d =10a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =480v, i d =10a gate source charge gate drain charge bv dss body diode reverse recovery charge i f =10a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =4.4a, v dd =150v, r g =25 ? , starting t j =25c www.freescale.net.cn 2/6 AOT10N60/aob10n60/aotf10n60 600v,10a n-channel mosfet
typical electrical and thermal characteristics 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 4 8 12 16 20 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.4 0.6 0.8 1.0 1.2 1.4 0 4 8 12 16 20 24 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature bv dss (normalized) www.freescale.net.cn 3/6 AOT10N60/aob10n60/aotf10n60 600v,10a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =10a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for AOT10N60/aob10n60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for aotf10n60 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) www.freescale.net.cn 4/6 AOT10N60/aob10n60/aotf10n60 600v,10a n-channel mosfet
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal imp edance for AOT10N60/aob10n60 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 13: normalized maximum transient thermal imp edance for aotf10n60 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 5/6 AOT10N60/aob10n60/aotf10n60 600v,10a n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 6/6 AOT10N60/aob10n60/aotf10n60 600v,10a n-channel mosfet
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